Samsung Announces an Extremely Important Premiere for the Whole World

Samsung Electronics, a world leader in advanced memory technology, marks a significant new advance in the IT industry with the launch of mass production for 9th generation V-NAND. This includes the first 1 terabit (Tb) triple-level (TLC) NAND cell, further strengthening Samsung’s leadership position in the NAND flash market.

“We are excited to offer the industry’s first 9th generation V-NAND, which will revolutionize future applications. To meet the ever-evolving requirements of NAND flash solutions, Samsung has pushed the boundaries of cell architecture and operational scheme for our next-generation product,” said SungHoi Hur, Head of Flash Product & Technology of Memory Business at Samsung Electronics.

Samsung has been able to improve the bit density of 9th generation V-NAND by about 50% over 8th generation V-NAND, offering the smallest cell size and thinnest mold in the industry. Innovations such as avoiding cell interference and extending cell life have been applied to improve product quality and reliability.

Samsung Announces an Extremely Important Premiere for the Whole World

Samsung’s new “channel hole etching” technology demonstrates the company’s advanced process capabilities, allowing large numbers of cell layers to be drilled simultaneously. This maximizes manufacturing productivity and is essential as the number of cell layers increases.

The 9th generation V-NAND is also equipped with the next-generation NAND flash interface, “Toggle 5.1”, which supports a 33% increase in data I/O speeds, reaching up to 3.2 gigabits per second (Gbps). With this new interface, Samsung plans to strengthen its position in the high-performance SSD market by expanding support for PCIe 5.0.

Improvements in low-power design have resulted in a 10% reduction in power consumption compared to the previous generation. These advances are vital in an era where reducing energy consumption and carbon emissions is becoming crucial for customers. Samsung’s 9th generation V-NAND is expected to provide an optimal solution for future applications while meeting stringent sustainability requirements.

Samsung began mass production of its 9th generation 1Tb TLC V-NAND this month and plans to launch its quad-level cell (QLC) model in the second half of this year, continuing to be at the forefront of innovation in memory.